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| Manufacturer | Samsung |
|---|---|
| Manufacturer's Part Number | K4N26323AE-GC20 |
| Description | GDDR2 DRAM; No. of Terminals: 144; Package Code: LFBGA; Refresh Cycles: 4096; Package Shape: SQUARE; Maximum Supply Voltage (Vsup): 2.6 V; |
| Datasheet | K4N26323AE-GC20 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Standby Current: | .11 Amp |
| Organization: | 4MX32 |
| Output Characteristics: | 3-STATE |
| Maximum Seated Height: | 1.4 mm |
| Access Mode: | FOUR BANK PAGE BURST |
| Minimum Supply Voltage (Vsup): | 2.4 V |
| Sub-Category: | DRAMs |
| Surface Mount: | YES |
| Maximum Supply Current: | 1400 mA |
| Terminal Finish: | TIN LEAD |
| No. of Terminals: | 144 |
| Maximum Clock Frequency (fCLK): | 500 MHz |
| No. of Words: | 4194304 words |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY, LOW PROFILE, FINE PITCH |
| Technology: | CMOS |
| JESD-30 Code: | S-PBGA-B144 |
| Package Shape: | SQUARE |
| Terminal Form: | BALL |
| Operating Mode: | SYNCHRONOUS |
| Package Code: | LFBGA |
| Width: | 13 mm |
| Input/Output Type: | COMMON |
| No. of Ports: | 1 |
| Memory Density: | 134217728 bit |
| Self Refresh: | YES |
| Sequential Burst Length: | 4 |
| Memory IC Type: | GDDR2 DRAM |
| JESD-609 Code: | e0 |
| Memory Width: | 32 |
| No. of Functions: | 1 |
| Qualification: | Not Qualified |
| Package Equivalence Code: | BGA144,12X12,32 |
| Refresh Cycles: | 4096 |
| Length: | 13 mm |
| Maximum Access Time: | .35 ns |
| No. of Words Code: | 4M |
| Nominal Supply Voltage / Vsup (V): | 2.5 |
| Additional Features: | AUTO/SELF REFRESH |
| Terminal Pitch: | .8 mm |
| Maximum Supply Voltage (Vsup): | 2.6 V |
| Power Supplies (V): | 1.8,2.5 |
