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| Manufacturer | Samsung |
|---|---|
| Manufacturer's Part Number | K4T1G044QE-HCF7 |
| Description | DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; |
| Datasheet | K4T1G044QE-HCF7 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Organization: | 256MX4 |
| Output Characteristics: | 3-STATE |
| Maximum Seated Height: | 1.2 mm |
| Access Mode: | MULTI BANK PAGE BURST |
| Minimum Supply Voltage (Vsup): | 1.7 V |
| Sub-Category: | DRAMs |
| Surface Mount: | YES |
| Maximum Supply Current: | 165 mA |
| No. of Terminals: | 60 |
| Maximum Clock Frequency (fCLK): | 400 MHz |
| No. of Words: | 268435456 words |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Technology: | CMOS |
| JESD-30 Code: | R-PBGA-B60 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | BALL |
| Operating Mode: | SYNCHRONOUS |
| Maximum Operating Temperature: | 85 Cel |
| Package Code: | TFBGA |
| Width: | 7.5 mm |
| Moisture Sensitivity Level (MSL): | 3 |
| Input/Output Type: | COMMON |
| No. of Ports: | 1 |
| Memory Density: | 1073741824 bit |
| Self Refresh: | YES |
| Sequential Burst Length: | 4,8 |
| Memory IC Type: | DDR2 DRAM |
| Minimum Operating Temperature: | 0 Cel |
| Memory Width: | 4 |
| No. of Functions: | 1 |
| Qualification: | Not Qualified |
| Package Equivalence Code: | BGA60,9X11,32 |
| Refresh Cycles: | 8192 |
| Interleaved Burst Length: | 4,8 |
| Length: | 9.5 mm |
| Maximum Access Time: | .4 ns |
| No. of Words Code: | 256M |
| Nominal Supply Voltage / Vsup (V): | 1.8 |
| Additional Features: | AUTO/SELF REFRESH |
| Peak Reflow Temperature (C): | 260 |
| Terminal Pitch: | .8 mm |
| Temperature Grade: | OTHER |
| Maximum Supply Voltage (Vsup): | 1.9 V |
| Power Supplies (V): | 1.8 |
