Samsung - K4T1G313QI-MCF70

K4T1G313QI-MCF70 by Samsung

Image shown is a representation only.

Manufacturer Samsung
Manufacturer's Part Number K4T1G313QI-MCF70
Description DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 128; Package Code: TFBGA; Package Shape: RECTANGULAR; Width: 10.5 mm;
Datasheet K4T1G313QI-MCF70 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Organization: 32MX32
Maximum Seated Height: 1.2 mm
Access Mode: MULTI BANK PAGE BURST
Minimum Supply Voltage (Vsup): 1.7 V
Surface Mount: YES
No. of Terminals: 128
No. of Words: 33554432 words
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH
Technology: CMOS
JESD-30 Code: R-PBGA-B128
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: SYNCHRONOUS
Maximum Operating Temperature: 95 Cel
Package Code: TFBGA
Width: 10.5 mm
No. of Ports: 1
Memory Density: 1073741824 bit
Self Refresh: YES
Memory IC Type: DDR2 DRAM
Minimum Operating Temperature: 0 Cel
Memory Width: 32
No. of Functions: 1
Qualification: Not Qualified
Length: 13.5 mm
Maximum Access Time: .4 ns
No. of Words Code: 32M
Nominal Supply Voltage / Vsup (V): 1.8
Additional Features: AUTO/SELF REFRESH
Terminal Pitch: .8 mm
Temperature Grade: OTHER
Maximum Supply Voltage (Vsup): 1.9 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products