Samsung - K4X1G163PC-FGC6

  1. Home
  2. Samsung - K4X1G163PC-FGC6
K4X1G163PC-FGC6 by Samsung

Image shown is a representation only.

Manufacturer Samsung
Manufacturer's Part Number K4X1G163PC-FGC6
Description DDR1 DRAM; No. of Terminals: 60; Package Code: BGA; Package Shape: RECTANGULAR; Memory Width: 16; Peak Reflow Temperature (C): 260;
Datasheet K4X1G163PC-FGC6 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
No. of Ports: 1
Memory Density: 17179869184 bit
Organization: 1GX16
Access Mode: FOUR BANK PAGE BURST
Surface Mount: YES
Memory IC Type: DDR1 DRAM
Memory Width: 16
No. of Functions: 1
No. of Terminals: 60
No. of Words: 1073741824 words
Qualification: Not Qualified
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY
Technology: CMOS
No. of Words Code: 1G
JESD-30 Code: R-PBGA-B60
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: ASYNCHRONOUS
Nominal Supply Voltage / Vsup (V): 1.8
Peak Reflow Temperature (C): 260
Package Code: BGA
Moisture Sensitivity Level (MSL): 3
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IS42S16800F-6TL-TR by Integrated Silicon Solution

IS42S16800F-6TL-TR

Integrated Silicon Solution

IS42S16800F-6TL-TR by Integrated Silicon Solution is an 8MX16 SYNCHRONOUS DRAM with 166 MHz clock frequency. It operates at a voltage of 3.3V and has a memory density of 134217728 bits. Ideal for applications requiring high-speed data processing in commercial temperature environments.
MT41K128M16JT-125IT:K by Micron Technology

MT41K128M16JT-125IT:K

Micron Technology

MT41K128M16JT-125IT:K by Micron Technology is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a max supply voltage of 1.45V and offers a memory density of 2147483648 bits. Ideal for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capabilities.
MT41K128M16JT-107:KTR by Micron Technology

MT41K128M16JT-107:KTR

Micron Technology

Micron Technology's MT41K128M16JT-107:KTR is a DDR3L DRAM with 128MX16 organization, operating at 934.5 MHz clock frequency. It features a thin profile grid array package and operates in synchronous mode. Ideal for applications requiring high-speed memory access and low power consumption.
MT48LC8M16A2P-7EIT:G by Micron Technology

MT48LC8M16A2P-7EIT:G

Micron Technology

Micron Technology's MT48LC8M16A2P-7EIT:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at up to 143 MHz clock frequency. It features self-refresh mode, common I/O type, and industrial temperature grade. Ideal for applications requiring high-speed memory access in compact form factors.
K4B2G0846D-HCH9 by Samsung

K4B2G0846D-HCH9

Samsung

Samsung's K4B2G0846D-HCH9 DDR3 DRAM features 256MX8 organization, 667 MHz clock frequency, and 2147483648 bit memory density. Ideal for high-performance computing applications requiring fast data processing and storage with a max operating temperature of 85°C.
MT53D512M32D2DS-046WT:D by Micron Technology

MT53D512M32D2DS-046WT:D

Micron Technology

Micron Technology's MT53D512M32D2DS-046WT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz clock frequency. It features single bank page burst access mode and common I/O type, suitable for applications requiring high-speed synchronous memory with low power consumption.
MT53E1G32D2FW-046AUT:B by Micron Technology

MT53E1G32D2FW-046AUT:B

Micron Technology

Micron Technology's MT53E1G32D2FW-046AUT:B is a LPDDR4 DRAM with 1GX32 organization, operating at 2133 MHz. It features a thin profile grid array package, operates at temperatures from -40 to 125 °C, and is suitable for applications requiring high-speed synchronous memory.
IS43TR16128C-15HBL by Integrated Silicon Solution

IS43TR16128C-15HBL

Integrated Silicon Solution

IS43TR16128C-15HBL by Integrated Silicon Solution is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in electronic devices.
W9825G6KH-6I by Winbond Electronics

W9825G6KH-6I

Winbond Electronics

W9825G6KH-6I by Winbond Electronics is a 16MX16 Synchronous DRAM with 268Mbit memory density. Operating at 3.3V, it features self-refresh and offers a max access time of 5ns. Ideal for industrial applications requiring fast and reliable memory performance in a compact form factor.
AS4C16M16SA-6TINTR by Alliance Memory

AS4C16M16SA-6TINTR

Alliance Memory

Alliance Memory's AS4C16M16SA-6TINTR is a 16MX16 Synchronous DRAM with 166 MHz clock frequency, ideal for industrial applications. Features include 3.3V supply voltage, 85°C operating temperature, and common I/O type. Suitable for systems requiring high-speed memory access in compact form factors.
MT41K512M8DA-107:P by Micron Technology

MT41K512M8DA-107:P

Micron Technology

Micron Technology's MT41K512M8DA-107:P is a DDR3L DRAM with 512MX8 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. This thin-profile package has 78 terminals in a grid array shape, suitable for applications requiring high memory density and low power consumption.
MT41K512M8DA-107AAT:PTR by Micron Technology

MT41K512M8DA-107AAT:PTR

Micron Technology

DDR3L DRAM; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN SILVER COPPER;
IS42S16100H-7TLI-TR by Integrated Silicon Solution

IS42S16100H-7TLI-TR

Integrated Silicon Solution

IS42S16100H-7TLI-TR by Integrated Silicon Solution is a 1MX16 Synchronous DRAM with 16-bit memory width. Operating at 3.3V, it features dual bank page burst access mode and self-refresh capability. Ideal for industrial applications requiring fast data access with a max operating temperature of 85°C.
MT40A1G16RC-062EIT:BTR by Micron Technology

MT40A1G16RC-062EIT:BTR

Micron Technology

DDR4 DRAM; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN SILVER COPPER; Peak Reflow Temperature (C): 260; JESD-609 Code: e1;
MT53E512M32D1ZW-046WT:B by Micron Technology

MT53E512M32D1ZW-046WT:B

Micron Technology

Micron Technology's MT53E512M32D1ZW-046WT:B is a LPDDR4 DRAM with 512MX32 organization, operating at up to 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.
MT48LC4M32B2B5-7:G by Micron Technology

MT48LC4M32B2B5-7:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;
MT41K256M16TW-107IT:PTR by Micron Technology

MT41K256M16TW-107IT:PTR

Micron Technology

MT41K256M16TW-107IT:PTR by Micron Technology is a 256MX16 DDR3L DRAM with a memory density of 4Gb. It operates at a nominal voltage of 1.35V and has an access time of 20ns. This memory module is suitable for applications requiring high-speed synchronous operation and low power consumption.
MT8KTF51264HZ-1G9P1 by Micron Technology

MT8KTF51264HZ-1G9P1

Micron Technology

MT8KTF51264HZ-1G9P1 by Micron Technology is a DDR3L DRAM MODULE with 512MX64 organization. It operates in synchronous mode, has a self-refresh feature, and a nominal voltage of 1.35V. It is commonly used in commercial applications requiring high memory density and single bank page burst access mode.
M374S1723FTS-C7A by Samsung

M374S1723FTS-C7A

Samsung

Samsung M374S1723FTS-C7A is a 16MX72 Synchronous DRAM Module with 133 MHz fCLK. It operates at 3.3V, has 72 memory width, and supports FOUR BANK PAGE BURST access mode. Ideal for applications requiring high-speed data processing in commercial temperature environments.
M366S1654ETS-C7A by Samsung

M366S1654ETS-C7A

Samsung

Samsung's M366S1654ETS-C7A is a 16MX64 synchronous DRAM module with 3.3V supply, operating at up to 133 MHz clock frequency. Ideal for applications requiring high-speed memory access and data processing capabilities in commercial temperature environments.