Image shown is a representation only.
| Manufacturer | Samsung |
|---|---|
| Manufacturer's Part Number | K4X56323PG-8GC3T |
| Description | DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 90; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; |
| Datasheet | K4X56323PG-8GC3T Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Standby Current: | .0003 Amp |
| Organization: | 8MX32 |
| Output Characteristics: | 3-STATE |
| Sub-Category: | DRAMs |
| Surface Mount: | YES |
| Maximum Supply Current: | 140 mA |
| Terminal Finish: | TIN SILVER COPPER |
| No. of Terminals: | 90 |
| Maximum Clock Frequency (fCLK): | 133 MHz |
| No. of Words: | 8388608 words |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY, FINE PITCH |
| Technology: | CMOS |
| JESD-30 Code: | R-PBGA-B90 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | BALL |
| Maximum Operating Temperature: | 85 Cel |
| Package Code: | FBGA |
| Moisture Sensitivity Level (MSL): | 3 |
| Input/Output Type: | COMMON |
| Memory Density: | 268435456 bit |
| Sequential Burst Length: | 2,4,8,16 |
| Memory IC Type: | DDR1 DRAM |
| JESD-609 Code: | e1 |
| Minimum Operating Temperature: | -25 Cel |
| Memory Width: | 32 |
| Qualification: | Not Qualified |
| Package Equivalence Code: | BGA90,9X15,32 |
| Refresh Cycles: | 8192 |
| Interleaved Burst Length: | 2,4,8,16 |
| Maximum Access Time: | 6 ns |
| No. of Words Code: | 8M |
| Nominal Supply Voltage / Vsup (V): | 1.8 |
| Peak Reflow Temperature (C): | 260 |
| Terminal Pitch: | .8 mm |
| Temperature Grade: | OTHER |
| Power Supplies (V): | 1.8 |
