K7D163671M-HC33 by Samsung | Memory ICs

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Manufacturer	Samsung
Manufacturer's Part Number	K7D163671M-HC33
Description	DDR SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE;
Datasheet	K7D163671M-HC33 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Organization:	512KX36
Output Characteristics:	3-STATE
Maximum Seated Height:	2.55 mm
Minimum Supply Voltage (Vsup):	2.37 V
Sub-Category:	SRAMs
Surface Mount:	YES
Maximum Supply Current:	750 mA
Terminal Finish:	TIN LEAD
No. of Terminals:	153
Maximum Clock Frequency (fCLK):	333 MHz
No. of Words:	524288 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY
Technology:	CMOS
JESD-30 Code:	R-PBGA-B153
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	SYNCHRONOUS
Maximum Operating Temperature:	70 Cel
Package Code:	BGA
Width:	14 mm
Input/Output Type:	COMMON
Memory Density:	18874368 bit
Minimum Standby Voltage:	2.37 V
Memory IC Type:	DDR SRAM
JESD-609 Code:	e0
Minimum Operating Temperature:	0 Cel
Memory Width:	36
No. of Functions:	1
Qualification:	Not Qualified
Package Equivalence Code:	BGA153,9X17,50
Length:	22 mm
Maximum Access Time:	1.7 ns
No. of Words Code:	512K
Nominal Supply Voltage / Vsup (V):	2.5
Parallel or Serial:	PARALLEL
Terminal Pitch:	1.27 mm
Temperature Grade:	COMMERCIAL
Maximum Supply Voltage (Vsup):	2.63 V
Power Supplies (V):	1.5,2.5

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