KSB744-R by Samsung | Transistors

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Manufacturer	Samsung
Manufacturer's Part Number	KSB744-R
Description	PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 45 MHz; Maximum Collector Current (IC): 3 A; Maximum Power Dissipation Ambient: 10 W;
Datasheet	KSB744-R Datasheet
In Stock	2,513

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	45 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	3 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
JEDEC-95 Code:	TO-126
Polarity or Channel Type:	PNP
Surface Mount:	NO
Minimum DC Current Gain (hFE):	60
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	45 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum VCEsat:	2 V
Maximum Power Dissipation Ambient:	10 W

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,513	-	-

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