Samsung - KSR2013

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KSR2013 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number KSR2013
Description PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
Datasheet KSR2013 Datasheet
In Stock120
NAME DESCRIPTION
Nominal Transition Frequency (fT): 200 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
JEDEC-95 Code: TO-92
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 68
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .3 W
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 21.3636
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