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| Manufacturer | Samsung |
|---|---|
| Manufacturer's Part Number | MP18R1628EF0-CT9 |
| Description | RAMBUS DRAM MODULE; No. of Terminals: 200; Package Shape: RECTANGULAR; Memory Width: 18; Memory Density: 2415919104 bit; Access Mode: BLOCK ORIENTED PROTOCOL; |
| Datasheet | MP18R1628EF0-CT9 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Organization: | 128MX18 |
| Access Mode: | BLOCK ORIENTED PROTOCOL |
| Minimum Supply Voltage (Vsup): | 2.37 V |
| Surface Mount: | NO |
| No. of Terminals: | 200 |
| No. of Words: | 134217728 words |
| Terminal Position: | UNSPECIFIED |
| Package Style (Meter): | MICROELECTRONIC ASSEMBLY |
| Technology: | CMOS |
| JESD-30 Code: | R-XXMA-X200 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Operating Mode: | SYNCHRONOUS |
| No. of Ports: | 1 |
| Memory Density: | 2415919104 bit |
| Self Refresh: | YES |
| Memory IC Type: | RAMBUS DRAM MODULE |
| Memory Width: | 18 |
| No. of Functions: | 1 |
| Qualification: | Not Qualified |
| No. of Words Code: | 128M |
| Nominal Supply Voltage / Vsup (V): | 2.5 |
| Additional Features: | SELF CONTAINED REFRESH |
| Maximum Supply Voltage (Vsup): | 2.63 V |
