Samsung - MS18R1622AH0-CM8

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MS18R1622AH0-CM8 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number MS18R1622AH0-CM8
Description RAMBUS DRAM MODULE; No. of Terminals: 160; Package Code: DIMM; Package Shape: RECTANGULAR; Surface Mount: NO; Nominal Supply Voltage / Vsup (V): 2.5;
Datasheet MS18R1622AH0-CM8 Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Organization: 32MX18
Output Characteristics: 3-STATE
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Access Mode: BLOCK ORIENTED PROTOCOL
Minimum Supply Voltage (Vsup): 2.37 V
Sub-Category: DRAMs
Surface Mount: NO
Maximum Supply Current: 800 mA
No. of Terminals: 160
Maximum Clock Frequency (fCLK): 800 MHz
No. of Words: 33554432 words
Terminal Position: DUAL
Package Style (Meter): MICROELECTRONIC ASSEMBLY
Technology: CMOS
JESD-30 Code: R-XDMA-N160
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: SYNCHRONOUS
Package Code: DIMM
Input/Output Type: COMMON
No. of Ports: 1
Memory Density: 603979776 bit
Self Refresh: YES
Memory IC Type: RAMBUS DRAM MODULE
Memory Width: 18
No. of Functions: 1
Qualification: Not Qualified
Package Equivalence Code: DIMM160,25
Maximum Access Time: 40 ns
No. of Words Code: 32M
Nominal Supply Voltage / Vsup (V): 2.5
Additional Features: SELF CONTAINED REFRESH
Peak Reflow Temperature (C): NOT SPECIFIED
Terminal Pitch: .635 mm
Maximum Supply Voltage (Vsup): 2.63 V
Power Supplies (V): 1.8/2.5,2.5
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