Samsung - MZ-V8V1T0BW

  1. Home
  2. Samsung - MZ-V8V1T0BW
MZ-V8V1T0BW by Samsung

Image shown is a representation only.

Manufacturer Samsung
Manufacturer's Part Number MZ-V8V1T0BW
Description FLASH MODULE;
Datasheet MZ-V8V1T0BW Datasheet
NAME DESCRIPTION
Memory IC Type: FLASH MODULE
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

AT45DB161E-SSHF-T by Adesto Technologies

AT45DB161E-SSHF-T

Adesto Technologies

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Seated Height: 1.75 mm;
IS25LP256D-JLLE by Integrated Silicon Solution

IS25LP256D-JLLE

Integrated Silicon Solution

IS25LP256D-JLLE by Integrated Silicon Solution is a 32MX8 NOR flash memory with 133 MHz clock frequency. Operating at -40 to 105 °C, it offers 100000 Write/Erase Cycles endurance. Ideal for industrial applications requiring high-speed data storage in compact form factor.
MT29F1G08ABADAWP-ITX:DTR by Micron Technology

MT29F1G08ABADAWP-ITX:DTR

Micron Technology

Micron Technology's MT29F1G08ABADAWP-ITX:DTR is a 128MX8 SLC NAND flash memory with 1073741824 bit density. Operating at 3.3V, it has an industrial temperature grade and supports asynchronous mode. This rectangular package with 48 terminals is suitable for various applications requiring high-speed parallel memory access.
PC28F128P33BF60A by Micron Technology

PC28F128P33BF60A

Micron Technology

Micron Technology's PC28F128P33BF60A is a 8MX16 NOR flash memory with 64 terminals. Operating at 3V, it offers 134217728 bits of memory density and supports synchronous mode. With a temperature range of -40 to 85°C, it is ideal for industrial applications requiring fast access times and low standby current.
MT29F128G08AJAAAWP-ITZ:A by Micron Technology

MT29F128G08AJAAAWP-ITZ:A

Micron Technology

Micron Technology's MT29F128G08AJAAAWP-ITZ:A is a 3.3V MLC NAND Flash Memory with 16GX8 organization, operating from -40 to 85 °C. It has a memory density of 137.4Gb and is suitable for industrial applications requiring high-speed parallel data storage.
S29AL008J70TFI013 by Cypress Semiconductor

S29AL008J70TFI013

Cypress Semiconductor

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Surface Mount: YES;
S25FL128LAGMFV010 by Cypress Semiconductor

S25FL128LAGMFV010

Cypress Semiconductor

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: SQUARE; Operating Mode: SYNCHRONOUS;
MT25QL256ABA8E12-1SITTR by Micron Technology

MT25QL256ABA8E12-1SITTR

Micron Technology

FLASH; Programming Voltage (V): 3; JESD-609 Code: e1; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; Terminal Finish: TIN SILVER COPPER;
S25FL256LAGNFV010 by Cypress Semiconductor

S25FL256LAGNFV010

Cypress Semiconductor

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Programming Voltage (V): 3;
AT25SF041B-SSHD-B by Renesas Electronics

AT25SF041B-SSHD-B

Renesas Electronics

AT25SF041B-SSHD-B by Renesas Electronics is a NOR type flash memory with 4Mx1 organization, operating at up to 108MHz clock frequency. It offers 100,000 write/erase cycles and is suitable for industrial applications requiring high endurance serial SPI memory with a supply voltage range of 2.7V to 3.6V.
MT25QU512ABB8E12-0AAT by Micron Technology

MT25QU512ABB8E12-0AAT

Micron Technology

MT25QU512ABB8E12-0AAT by Micron Technology is a 64MX8 Flash Memory with 512753664 bit memory density. Operating at 166 MHz, it has a supply voltage of 1.7V to 2V and supports synchronous mode. Ideal for industrial applications, this AEC-Q100 graded memory IC offers high performance in a compact GRID ARRAY package.
S26KL512SDABHB023 by Cypress Semiconductor

S26KL512SDABHB023

Cypress Semiconductor

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; No. of Words Code: 64M;
AT45DB081E-SHN-B by Dialog Semiconductor

AT45DB081E-SHN-B

Dialog Semiconductor

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
AT45DB321E-SHFHA-T by Adesto Technologies

AT45DB321E-SHFHA-T

Adesto Technologies

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Memory Width: 1;
S25FL064LABMFI011 by Infineon Technologies

S25FL064LABMFI011

Infineon Technologies

S25FL064LABMFI011 by Infineon Technologies is a 16MX4 flash memory with 16777216 words and 67108864 bit memory density. Operating at up to 108 MHz, it has a synchronous mode and operates in industrial temperature grade. This small outline package with gull wing terminals is ideal for applications requiring high-speed data storage.
S29GL256P10TFI010 by Advanced Micro Devices

S29GL256P10TFI010

Advanced Micro Devices

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Package Equivalence Code: TSSOP56,.8,20;
AT45DB041E-SSHN-T by Dialog Semiconductor

AT45DB041E-SSHN-T

Dialog Semiconductor

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Write Protection: HARDWARE/SOFTWARE;
KLMAG1JETD-B041 by Samsung

KLMAG1JETD-B041

Samsung

Samsung's KLMAG1JETD-B041 Flash Memory features 16GX8 organization, 1.8V programming voltage, and 137.4Gbit memory density. Ideal for compact devices due to its 0.8mm height, it operates b/w -25°C to 85°C temperatures with a width of 11.5mm and length of 13mm.
S25FL256SAGMFI001 by Spansion

S25FL256SAGMFI001

Spansion

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Power Supplies (V): 3/3.3;
PC28F256P30BFE by Micron Technology

PC28F256P30BFE

Micron Technology

Micron Technology's PC28F256P30BFE is a 16Mx16 NOR flash memory with 1.8V supply, operating at -40 to 85°C. Featuring synchronous mode, it has 4 sectors of 255 words each and supports common flash interface. Ideal for industrial applications requiring fast access time and low standby current.