SF2N06L by Samsung | Transistors

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Manufacturer	Samsung
Manufacturer's Part Number	SF2N06L
Description	N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain Current (Abs) (ID): 2 A; Minimum DS Breakdown Voltage: 60 V;
Datasheet	SF2N06L Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	2 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	2.5 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.11 ohm
JEDEC-95 Code:	TO-92
Polarity or Channel Type:	N-CHANNEL AND P-CHANNEL
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID):	2 A

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