Samsung - SFI9610

SFI9610 by Samsung

Image shown is a representation only.

Manufacturer Samsung
Manufacturer's Part Number SFI9610
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; JESD-30 Code: R-PSIP-T3; Maximum Operating Temperature: 150 Cel;
Datasheet SFI9610 Datasheet
In Stock632
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 143 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 1.75 A
Maximum Pulsed Drain Current (IDM): 7 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 20 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 1.8 A
Maximum Drain-Source On Resistance: 3 ohm
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
632 - -

Popular Products

Category Top Products