Samsung - SFP2955

SFP2955 by Samsung

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Manufacturer Samsung
Manufacturer's Part Number SFP2955
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 49 W; Maximum Drain Current (ID): 9.4 A; Maximum Pulsed Drain Current (IDM): 38 A;
Datasheet SFP2955 Datasheet
In Stock139
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 9.4 A
Maximum Pulsed Drain Current (IDM): 38 A
Sub-Category: Other Transistors
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 49 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .3 ohm
Avalanche Energy Rating (EAS): 151 mJ
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: P-CHANNEL
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 9.4 A
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Pricing (USD)

Qty. Unit Price Ext. Price
139 $0.332 $46.148

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