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Manufacturer | Samsung |
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Manufacturer's Part Number | SFW2955 |
Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 49 W; Maximum Pulsed Drain Current (IDM): 38 A; Maximum Drain-Source On Resistance: .3 ohm; |
Datasheet | SFW2955 Datasheet |
In Stock | 829 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 9.4 A |
Maximum Pulsed Drain Current (IDM): | 38 A |
Sub-Category: | Other Transistors |
Surface Mount: | YES |
No. of Terminals: | 2 |
Maximum Power Dissipation (Abs): | 49 W |
Terminal Position: | SINGLE |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PSSO-G2 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .3 ohm |
Avalanche Energy Rating (EAS): | 151 mJ |
Polarity or Channel Type: | P-CHANNEL |
Minimum DS Breakdown Voltage: | 60 V |
Qualification: | Not Qualified |
Maximum Drain Current (Abs) (ID): | 9.4 A |