SSH25N40A by Samsung | Transistors

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Manufacturer	Samsung
Manufacturer's Part Number	SSH25N40A
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 278 W; Minimum DS Breakdown Voltage: 400 V; Package Style (Meter): IN-LINE;
Datasheet	SSH25N40A Datasheet
In Stock	558

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	25 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	3
Minimum DS Breakdown Voltage:	400 V
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	278 W
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	25 A
Maximum Drain-Source On Resistance:	.2 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
558	-	-

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