SSH40N20 by Samsung | Transistors

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Manufacturer	Samsung
Manufacturer's Part Number	SSH40N20
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Maximum Drain Current (ID): 40 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	SSH40N20 Datasheet
In Stock	408

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	40 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	3
Minimum DS Breakdown Voltage:	200 V
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	230 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	40 A
Maximum Drain-Source On Resistance:	.08 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
408	-	-

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