SSH7N80A by Samsung | Transistors

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Manufacturer	Samsung
Manufacturer's Part Number	SSH7N80A
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Turn Off Time (toff): 275 ns; No. of Elements: 1;
Datasheet	SSH7N80A Datasheet
In Stock	466

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Turn On Time (ton):	145 ns
Maximum Drain Current (ID):	7 A
Maximum Pulsed Drain Current (IDM):	28 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	200 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
Maximum Turn Off Time (toff):	275 ns
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	200 W
Maximum Drain-Source On Resistance:	1.8 ohm
Avalanche Energy Rating (EAS):	523 mJ
Maximum Feedback Capacitance (Crss):	66 pF
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	800 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	7 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
466	-	-

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