Samsung - SSI3N90A

SSI3N90A by Samsung

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Manufacturer Samsung
Manufacturer's Part Number SSI3N90A
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Pulsed Drain Current (IDM): 12 A; Operating Mode: ENHANCEMENT MODE;
Datasheet SSI3N90A Datasheet
In Stock162
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 286 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 3 A
Maximum Pulsed Drain Current (IDM): 12 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 900 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 100 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 3 A
Maximum Drain-Source On Resistance: 6.2 ohm
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Pricing (USD)

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