
Image shown is a representation only.
Manufacturer | Semicoa |
---|---|
Manufacturer's Part Number | 2N5109 |
Description | NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 2.5 W; Maximum Collector Current (IC): .4 A; |
Datasheet | 2N5109 Datasheet |
In Stock | 427 |
NAME | DESCRIPTION |
---|---|
Nominal Transition Frequency (fT): | 1200 MHz |
Package Body Material: | METAL |
Maximum Collector Current (IC): | .4 A |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Transistor Application: | AMPLIFIER |
Sub-Category: | Other Transistors |
Surface Mount: | NO |
Terminal Finish: | GOLD |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 2.5 W |
Terminal Position: | BOTTOM |
Package Style (Meter): | CYLINDRICAL |
JESD-30 Code: | O-MBCY-W3 |
No. of Elements: | 1 |
Package Shape: | ROUND |
Terminal Form: | WIRE |
Highest Frequency Band: | ULTRA HIGH FREQUENCY BAND |
Maximum Operating Temperature: | 200 Cel |
JEDEC-95 Code: | TO-39 |
Polarity or Channel Type: | NPN |
Minimum DC Current Gain (hFE): | 40 |
JESD-609 Code: | e4 |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 20 V |
Maximum Collector-Base Capacitance: | 3.5 pF |