2N5109 by Semicoa | Transistors

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Manufacturer	Semicoa
Manufacturer's Part Number	2N5109
Description	NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 2.5 W; Maximum Collector Current (IC): .4 A;
Datasheet	2N5109 Datasheet
In Stock	427

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	1200 MHz
Package Body Material:	METAL
Maximum Collector Current (IC):	.4 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	NO
Terminal Finish:	GOLD
No. of Terminals:	3
Maximum Power Dissipation (Abs):	2.5 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-MBCY-W3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	200 Cel
JEDEC-95 Code:	TO-39
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	40
JESD-609 Code:	e4
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	20 V
Maximum Collector-Base Capacitance:	3.5 pF

Pricing (USD)

Qty.	Unit Price	Ext. Price
427	-	-

OPERATIONAL AMPLIFIER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 85 Cel; Terminal Form: THROUGH-HOLE;