Image shown is a representation only.
| Manufacturer | Semiconductors |
|---|---|
| Manufacturer's Part Number | 2N4870 |
| Description | Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Static Inter-Base Resistance: 9.1 kohm; Minimum Intrinsic Stand-off Ratio: .56; Maximum Operating Temperature: 125 Cel; |
| Datasheet | 2N4870 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Minimum Intrinsic Stand-off Ratio: | .56 |
| Maximum Intrinsic Stand-off Ratio: | .75 |
| Minimum Valley Point Current: | 2 mA |
| Sub-Category: | Unijunction Transistors |
| Surface Mount: | NO |
| Maximum Inter-base Voltage: | 35 V |
| Minimum Operating Temperature: | -55 Cel |
| Maximum Peak Point Current: | 5 mA |
| Maximum Power Dissipation (Abs): | .3 W |
| Minimum Static Inter-Base Resistance: | 4 kohm |
| Maximum Emitter Current: | 50 mA |
| Maximum Operating Temperature: | 125 Cel |
| Maximum Static Inter-Base Resistance: | 9.1 kohm |








