SEMIX653GD176HDC by Semikron International | Transistors

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Manufacturer	Semikron International
Manufacturer's Part Number	SEMIX653GD176HDC
Description	N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 650 A; Package Style (Meter): FLANGE MOUNT; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet	SEMIX653GD176HDC Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	650 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
Transistor Element Material:	SILICON
Transistor Application:	POWER CONTROL
Sub-Category:	Insulated Gate BIP Transistors
Surface Mount:	NO
Terminal Finish:	TIN/SILVER
Nominal Turn Off Time (toff):	1165 ns
No. of Terminals:	29
Terminal Position:	UPPER
Nominal Turn On Time (ton):	380 ns
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X29
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3/e4
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	1700 V
Maximum Gate-Emitter Voltage:	20 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	2.45 V

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