STMicroelectronics - 2ST3360U1

  1. Home
  2. STMicroelectronics - 2ST3360U1
2ST3360U1 by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number 2ST3360U1
Description NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): .8 A; Package Shape: RECTANGULAR;
Datasheet 2ST3360U1 Datasheet
In Stock2,462
NAME DESCRIPTION
Nominal Transition Frequency (fT): 130 MHz
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC): .8 A
Configuration: SEPARATE, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN AND PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 160
Terminal Finish: GOLD
JESD-609 Code: e4
No. of Terminals: 6
Maximum Collector-Emitter Voltage: 60 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-CDSO-N6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,462 - -

Popular Products

Category Top Products

TIP147 by Power Innovations

TIP147

Power Innovations

Power Bipolar Transistors; Surface Mount: NO; Package Shape: RECTANGULAR; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): FLANGE MOUNT;
BCP53-16T3G by Onsemi

BCP53-16T3G

Onsemi

BCP53-16T3G by Onsemi is a PNP power BJT with 80V VCEO, 1.5A IC, and 100 hFE. Ideal for amplifier applications, it operates b/w -65 to 150°C with a fT of 50MHz. This small outline transistor has Gull Wing terminals in a rectangular package.
TIP36C by Inchange Semiconductor

TIP36C

Inchange Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
BDW93C by Onsemi

BDW93C

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; JESD-30 Code: R-PSFM-T3;
TIP32C by Continental Device India

TIP32C

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
TIP122 by Microsemi

TIP122

Microsemi

NPN; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JEDEC-95 Code: TO-220; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;
MJE350 by Fairchild Semiconductor

MJE350

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY;
TIP42C by Central Semiconductor

TIP42C

Central Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
D44H8 by Rectron

D44H8

Rectron

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): 10 A; JESD-30 Code: R-PSFM-T3;
TIP50 by Rectron

TIP50

Rectron

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Collector Current (IC): 1 A; Terminal Position: SINGLE;
BD1396STU by Fairchild Semiconductor

BD1396STU

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
TIP110 by Inchange Semiconductor

TIP110

Inchange Semiconductor

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Package Body Material: PLASTIC/EPOXY;
BD679AG by Onsemi

BD679AG

Onsemi

BD679AG by Onsemi is a NPN Power BJT with 40W power dissipation, 750 min hFE, and 80V VCE. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with through-hole terminals.
JANTXV2N3055 by M/a-com Technology Solutions

JANTXV2N3055

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Reference Standard: MIL-19500; Terminal Position: BOTTOM;
TIP31C by Solid State Devices

TIP31C

Solid State Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
MJD122T4 by Motorola

MJD122T4

Motorola

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 8 A; Package Shape: RECTANGULAR;
TIP120 by NXP Semiconductors

TIP120

NXP Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; No. of Elements: 1; Package Shape: RECTANGULAR;
2N3055 by Micro Commercial Components

2N3055

Micro Commercial Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 10 A; Package Body Material: METAL;
TIP31CG by Changzhou Galaxy Century Microelectronics

TIP31CG

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
BD679A by Comset Semiconductors

BD679A

Comset Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): .06 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;