Image shown is a representation only.
| Manufacturer | STMicroelectronics |
|---|---|
| Manufacturer's Part Number | A2C25S12M3 |
| Description | N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 197 W; Maximum Collector Current (IC): 25 A; Maximum Collector-Emitter Voltage: 1200 V; |
| Datasheet | A2C25S12M3 Datasheet |
| In Stock | 1,725 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 25 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Transistor Application: | MOTOR CONTROL |
| Maximum Gate-Emitter Threshold Voltage: | 7 V |
| Surface Mount: | NO |
| Nominal Turn Off Time (toff): | 338 ns |
| No. of Terminals: | 35 |
| Maximum Power Dissipation (Abs): | 197 W |
| Terminal Position: | UPPER |
| Nominal Turn On Time (ton): | 125.2 ns |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-XUFM-X35 |
| No. of Elements: | 6 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Maximum Operating Temperature: | 150 Cel |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -40 Cel |
| Maximum Collector-Emitter Voltage: | 1200 V |
| Maximum Gate-Emitter Voltage: | 20 V |
| Reference Standard: | UL RECOGNIZED |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum VCEsat: | 2.45 V |
