BDV64A by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	BDV64A
Description	PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): .1 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 12 A;
Datasheet	BDV64A Datasheet
In Stock	487

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	.1 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	12 A
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	3
Maximum Power Dissipation (Abs):	125 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	125 W
JEDEC-95 Code:	TO-218
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	1000
JESD-609 Code:	e0
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	80 V
Maximum VCEsat:	2 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
487	-	-

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