2SC5200-O by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	2SC5200-O
Description	NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A;
Datasheet	2SC5200-O Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	30 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	15 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	150 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Maximum Power Dissipation Ambient:	150 W
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	80
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	230 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	3 V

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