STMicroelectronics - BUX78ESY

PNP; Configuration: DARLINGTON WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Power Dissipation Ambient: 2 W;

NPN; Configuration: SINGLE; Maximum Collector Current (IC): 15 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 450 V; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 15 MHz; Maximum Collector Current (IC): 10 A; Terminal Position: SINGLE;

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;

BD139.10 by Motorola is a NPN power BJT with 3 terminals and max. power dissipation of 8W. It is ideal for switching applications, offering a max. collector-emitter voltage of 80V and max. collector current of 1.5A, with a min DC current gain of 63 (hFE).

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON; Maximum Turn Off Time (toff): 2400 ns;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 5;

TIP47 by Samsung is a NPN power bipolar junction transistor with a maximum power dissipation of 40W and a maximum operating temperature of 150 °C. It has a maximum collector-emitter voltage of 250V and a maximum collector current of 1A. This transistor is designed for switching applications and has a minimum DC current gain of 10. Its package style is TO-220AB with a rectangular shape and through-hole terminal form.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 3;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JESD-30 Code: R-PSFM-T3; No. of Terminals: 3;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Package Shape: RECTANGULAR;

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 15 A; No. of Terminals: 3; Terminal Position: SINGLE;

PNP; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Terminal Finish: Tin/Lead (Sn/Pb); JEDEC-95 Code: TO-247;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Terminal Form: PIN/PEG; Minimum DC Current Gain (hFE): 5;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;