BUZ72A by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	BUZ72A
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Drain-Source On Resistance: .25 ohm; Minimum DS Breakdown Voltage: 100 V;
Datasheet	BUZ72A Datasheet
In Stock	339

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	115 ns
Maximum Drain Current (ID):	11 A
Maximum Pulsed Drain Current (IDM):	44 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	3
Maximum Power Dissipation (Abs):	40 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
Maximum Turn Off Time (toff):	50 ns
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Maximum Power Dissipation Ambient:	70 W
Maximum Drain-Source On Resistance:	.25 ohm
Avalanche Energy Rating (EAS):	36 mJ
Maximum Feedback Capacitance (Crss):	100 pF
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e0
Minimum DS Breakdown Voltage:	100 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	9 A

Pricing (USD)

Qty.	Unit Price	Ext. Price
339	-	-

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