STMicroelectronics - DB-900-100W

  1. Home
  2. STMicroelectronics - DB-900-100W
DB-900-100W by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number DB-900-100W
Description NARROW BAND HIGH POWER; Maximum Voltage Standing Wave Ratio: 10; Gain: 12.5 dB; Construction: MODULE; Minimum Operating Frequency: 869 MHz; Terminal Finish: Tin/Lead (Sn/Pb);
Datasheet DB-900-100W Datasheet
In Stock2,506
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 10
Construction: MODULE
Minimum Operating Frequency: 869 MHz
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 894 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Minimum Operating Temperature: -20 Cel
Gain: 12.5 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,506 - -

Popular Products

Category Top Products

HMC1040LP3CE by Hittite Microwave

HMC1040LP3CE

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: PHEMT; No. of Functions: 1;
MAX2643EXT+T by Maxim Integrated

MAX2643EXT+T

Maxim Integrated

WIDE BAND LOW POWER; Maximum Operating Frequency: 1000 MHz; Minimum Operating Frequency: 800 MHz; JESD-609 Code: e4; Characteristic Impedance: 50 ohm; Gain: 14.5 dB;
LEE-29 by Mini-circuits

LEE-29

Mini-circuits

Mini-circuits LEE-29 is a wide band low power RF amplifier with 13.3 dB gain, handling up to 15 dBm CW input power. It operates from 0 to 8000 MHz, with VSWR of 1.6 and characteristic impedance of 50 ohm. Ideal for RF & microwave applications requiring compact, high-performance amplification in temperature range -40 to 85°C.
MBC13916NT1 by Freescale Semiconductor

MBC13916NT1

Freescale Semiconductor

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Maximum Input Power (CW): 10 dBm; JESD-609 Code: e3; Maximum Operating Frequency: 2500 MHz;
RF5110GSR by Rf Micro Devices

RF5110GSR

Rf Micro Devices

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Technology: HYBRID; No. of Functions: 1; Gain: 33 dB;
ADPA7006AEHZ by Analog Devices

ADPA7006AEHZ

Analog Devices

ADPA7006AEHZ by Analog Devices is a RF & Microwave Amplifier with 20 dB gain, operating frequency range of 18-44 GHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for wide band medium power applications requiring high performance in surface mount configurations.
ADL9005ACPZN by Analog Devices

ADL9005ACPZN

Analog Devices

ADL9005ACPZN by Analog Devices is a wide band low power RF amplifier with 17 dB gain, operating from 10 MHz to 26500 MHz. It has a max input power of 22 dBm and VSWR of 1.49, suitable for RF & microwave applications requiring high performance amplification in plastic/epoxy package.
BGA2003,115 by NXP Semiconductors

BGA2003,115

NXP Semiconductors

The NXP Semiconductors BGA2003,115 is a RF & Microwave Amplifier with 16 dB gain and operates b/w 900-1800 MHz. It has a wide band low power technology, 50 ohm impedance, and requires a 2.5V power supply at max 15 mA current. Ideal for applications requiring high frequency amplification in components like plastic/epoxy packages.
RFSA2113TR13 by Rf Micro Devices

RFSA2113TR13

Rf Micro Devices

WIDE BAND MEDIUM POWER;
HMC441LP3ETR by Hittite Microwave

HMC441LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Terminal Finish: Matte Tin (Sn);
HMC478MP86TR by Hittite Microwave

HMC478MP86TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: SL,4GW-LD,.085CIR;
MMG20241HT1 by Freescale Semiconductor

MMG20241HT1

Freescale Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;
HMC1053 by Hittite Microwave

HMC1053

Hittite Microwave

WIDE BAND HIGH POWER; Terminal Finish: Gold (Au); JESD-609 Code: e4;
ZX60-2411BM-S by Mini-circuits

ZX60-2411BM-S

Mini-circuits

ZX60-2411BM-S by Mini-circuits is a COAXIAL RF amplifier with 9 dB Gain, 50 ohm Impedance, and 1.65 VSWR. Ideal for NARROW BAND LOW POWER applications in the frequency range of 1900-2400 MHz.
SPF5043ZSR by Qorvo

SPF5043ZSR

Qorvo

Qorvo's SPF5043ZSR is a GAAS RF amplifier with 11.4 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 25 dBm and operates at temperatures ranging from -40°C to 85°C. This wide band low power device is ideal for applications requiring surface mount components in RF and microwave systems.
RA07N4047M-101 by Mitsubishi Electric

RA07N4047M-101

Mitsubishi Electric

RA07N4047M-101 by Mitsubishi Electric is a RF amplifier module with max input power of 14.77 dBm and VSWR of 4. It operates in the frequency range of 400-470 MHz, ideal for narrowband high-power applications. With a temperature range from -30 to 90°C, it is suitable for various RF and microwave systems.
EMM5077VU by Sumitomo Electric Industries

EMM5077VU

Sumitomo Electric Industries

Sumitomo Electric Industries' EMM5077VU is a wide band medium power RF amplifier with 21 dB gain and 26 dBm CW input power. Operating from -40 to 85 °C, it covers frequencies from 3400 to 5000 MHz. Ideal for RF applications requiring high performance in a compact form factor.
ZHL-1-2W+ by Mini-circuits

ZHL-1-2W+

Mini-circuits

ZHL-1-2W+ by Mini-circuits is a wide band medium power RF amplifier with a gain of 29 dB. It has a max input power of 10 dBm and can operate in temperatures ranging from -20 to 65 °C. This coaxial amplifier is suitable for applications requiring amplification in the frequency range of 5 MHz to 500 MHz.
BGU8007,115 by NXP Semiconductors

BGU8007,115

NXP Semiconductors

NXP Semiconductors' BGU8007,115 is a RF & Microwave Amplifier with 6 terminals and Tin finish. It operates b/w -40 to 85°C, powered by 1.8V supply at max current of 14.7mA. Ideal for surface mount applications in various electronic devices.
BGU8103X by NXP Semiconductors

BGU8103X

NXP Semiconductors

The NXP Semiconductors BGU8103X is a RF & Microwave Amplifier with 10 dBm CW input power, 1.78 max VSWR, and 14.5 dB gain. It operates b/w -40 to 85°C, has a characteristic impedance of 50 ohm, and is suitable for narrow band low power applications in the frequency range of 1559-1610 MHz.