F0810MH by STMicroelectronics | Triggering Devices

Image shown is a representation only.

Manufacturer	STMicroelectronics
Manufacturer's Part Number	F0810MH
Description	SCR; Package Style (Meter): FLANGE MOUNT; Surface Mount: NO; Terminal Position: SINGLE; Repetitive Peak Off-state Voltage: 600 V; Package Shape: RECTANGULAR;
Datasheet	F0810MH Datasheet
In Stock	2,799

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Trigger Device Type:	SCR
Sub-Category:	Silicon Controlled Rectifiers
Surface Mount:	NO
Maximum Leakage Current:	1.5 mA
Terminal Finish:	MATTE TIN
Minimum Critical Rate of Rise of Off-state Voltage:	400 V/us
Maximum Holding Current:	75 mA
No. of Terminals:	3
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	125 Cel
Repetitive Peak Off-state Voltage:	600 V
Maximum RMS On-state Current:	8 A
JEDEC-95 Code:	TO-220AB
Repetitive Peak Reverse Voltage:	600 V
JESD-609 Code:	e3
Minimum Operating Temperature:	-45 Cel
Non Repetitive Peak On-state Current:	90 A
Maximum DC Gate Trigger Voltage:	2 V
Maximum DC Gate Trigger Current:	25 mA
Qualification:	Not Qualified
Maximum On-state Current:	5.1 A
Additional Features:	FAST
Nominal Circuit Commutated Turn-off Time:	8 us

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,799	-	-

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

LM358N by Texas Instruments is an operational amplifier with 2 functions, offering a max input offset voltage of 9000 uV and a nominal common mode reject ratio of 85 dB. Widely used in commercial applications, it operates at temperatures ranging from 0 to 70 °C and has a unity gain bandwidth of 1000 kHz.

SBAV99LT1G by Onsemi is a rectifier diode with a max repetitive peak reverse voltage of 100V. It has a small outline package style and a fast max reverse recovery time of 0.006 us. It is commonly used in applications requiring low power dissipation and high operating temperatures.

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; No. of Elements: 8; Minimum DC Current Gain (hFE): 1000;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;

D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Body or Shell Style: RECEPTACLE; MIL Conformity: YES;

TE Connectivity's CRG0805F10K is a 10000 ohm fixed resistor with 1% tolerance. It operates b/w -55 to 155 °C and has a power dissipation of 0.125 W. Ideal for surface mount applications in various electronic circuits due to its compact size and high temperature rating.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

ESD5Z5.0T1G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 5V reverse test voltage and 174W peak power dissipation. It is used for transient suppression in electronic circuits, meeting IEC-61000-4-2, 4-4 standards and UL recognized for reliability.

TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Polarity: BIDIRECTIONAL; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V;