STMicroelectronics - IRF250

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IRF250 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number IRF250
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 200 V; Maximum Feedback Capacitance (Crss): 300 pF;
Datasheet IRF250 Datasheet
In Stock16
NAME DESCRIPTION
Package Body Material: METAL
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 30 A
Maximum Pulsed Drain Current (IDM): 120 A
Surface Mount: NO
No. of Terminals: 2
Terminal Position: BOTTOM
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: O-MBFM-P2
No. of Elements: 1
Package Shape: ROUND
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 150 W
Maximum Drain-Source On Resistance: .085 ohm
Avalanche Energy Rating (EAS): 910 mJ
Maximum Feedback Capacitance (Crss): 300 pF
JEDEC-95 Code: TO-3
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
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