IRF250 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	IRF250
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 200 V; Maximum Feedback Capacitance (Crss): 300 pF;
Datasheet	IRF250 Datasheet
In Stock	16

NAME	DESCRIPTION
Package Body Material:	METAL
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	30 A
Maximum Pulsed Drain Current (IDM):	120 A
Surface Mount:	NO
No. of Terminals:	2
Terminal Position:	BOTTOM
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	O-MBFM-P2
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	PIN/PEG
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Power Dissipation Ambient:	150 W
Maximum Drain-Source On Resistance:	.085 ohm
Avalanche Energy Rating (EAS):	910 mJ
Maximum Feedback Capacitance (Crss):	300 pF
JEDEC-95 Code:	TO-3
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	200 V
Qualification:	Not Qualified

Pricing (USD)

Qty.	Unit Price	Ext. Price
16	-	-

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