STMicroelectronics - M27C160-150F1X

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 6; Package Code: SOC; Package Shape: RECTANGULAR; Memory Width: 1;

NMC27C16Q-55 by Texas Instruments is a 2Kx8 OTP ROM memory IC with 16384-bit density. It operates at 5V, has a max access time of 550ns, and features 3-STATE output characteristics. This CMOS technology device is commonly used in applications requiring non-volatile memory storage.

MR25H256ACDFR by Everspin: 32KX8 SPI BUS SERIAL EEPROM with 262144 bit memory density, operates at 3V, -40 to 85 °C. Ideal for industrial applications requiring small outline, heat sink package with synchronous operation.

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 14; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Seated Height: 1.75 mm;

OTP ROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 2; Package Code: FBGA; Package Shape: RECTANGULAR; Qualification: Not Qualified;

MEMORY CIRCUIT;

DS6207-4 by Analog Devices is a CMOS Memory Circuit with 384-bit memory density. It operates b/w 0 °C to 70°C, suitable for commercial applications. This rectangular IC has 5 terminals and is ideal for various memory circuit functions.

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 2; Package Shape: ROUND; JESD-30 Code: O-MEDB-N2; Maximum Supply Voltage (Vsup): 6 V;

TMS4100NC by Texas Instruments is a MOS memory IC with 28 terminals in an IN-LINE package. It operates b/w -25°C to 85°C, making it suitable for various applications requiring reliable memory storage in electronic devices. The rectangular PLASTIC/EPOXY body and DUAL terminal position enhance its durability and ease of integration.

47C16T-I/SN by Microchip Technology is a synchronous EEPROM+SRAM memory IC with an organization of 2KX8 and a memory density of 16384 bit. It operates at a nominal voltage of 5V and has a max access time of 400 ns. This memory circuit is commonly used in industrial applications requiring reliable data storage.

DS6417-002 by Analog Devices is a 256Kx8 MEMORY CIRCUIT with CMOS tech. Operating at 0-70 °C, it has a supply voltage of 4.5-5.5V. Suitable for applications requiring MICROELECTRONIC ASSEMBLY in COMMERCIAL settings.

Other Memory ICs;

MEMORY CIRCUIT; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 4; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS; Terminal Position: DUAL;

Texas Instruments' 5962-01-346-4015 is a ceramic memory IC with 512x9 organization, MOS technology, and 45ns access time. It operates at 5V, has 24 terminals in an in-line package style, and is used in commercial applications requiring reliable memory circuits.

SNC54LS170W by Texas Instruments is a MIL-STD-883 Class B (Modified) rated TTL IC with 16 terminals and a supply voltage of 5V. Its ceramic package can operate b/w -55°C to 125°C, making it suitable for military-grade applications requiring reliable memory functions in harsh environments. This rectangular flatpack IC is surface mountable and ideal for use in rugged electronic systems where high temperature tolerance and durability are essential.

Other Memory ICs;

Other Memory ICs;

M36LLR8860B1ZAQ by STMicroelectronics is a low-profile, synchronous memory IC featuring 16M words of FLASH+PSRAM with a supply voltage range of 1.7-1.95V. It operates b/w -25 °C and 85 °C, making it ideal for compact electronic applications. With an 88-terminal grid array design, it ensures efficient space utilization in devices.

M36W216BI85ZA1T from STMicroelectronics is a low-profile, asynchronous memory IC featuring 16Mbit density with FLASH+SRAM technology. It operates at 3V and supports a max access time of 85ns. Ideal for commercial applications requiring efficient data storage and retrieval.