STMicroelectronics - M28F201-120XP6R

  1. Home
  2. STMicroelectronics - M28F201-120XP6R
M28F201-120XP6R by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number M28F201-120XP6R
Description Other Memory ICs;
Datasheet M28F201-120XP6R Datasheet
In Stock621
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
621 - -

Popular Products

Category Top Products

DS1217A/192K-25 by Analog Devices

DS1217A/192K-25

Analog Devices

DS1217A/192K-25 by Analog Devices is a 24Kx8 CMOS memory circuit with 196608-bit density. It operates asynchronously at 5V, with a max access time of 250ns. Ideal for applications requiring fast and reliable non-volatile memory storage in commercial temperature environments.
TMS4C1070-30DJ by Texas Instruments

TMS4C1070-30DJ

Texas Instruments

TMS4C1070-30DJ by Texas Instruments is a 20-terminal memory circuit IC with 5V nominal voltage. It operates in commercial temperature grade range of 0-70°C, with max access time of 25ns. This small outline package IC is suitable for various applications requiring fast memory access and low standby current consumption.
TMS27L08JL by Texas Instruments

TMS27L08JL

Texas Instruments

TMS27L08JL by Texas Instruments is a 1KX8 OTP ROM memory IC with 8192-bit density and 450ns access time. It operates b/w 0-70°C, featuring a 3-STATE output and MOS technology. Ideal for applications requiring non-volatile memory storage in commercial-grade environments.
CY15B104QSN-108SXIES by Infineon Technologies

CY15B104QSN-108SXIES

Infineon Technologies

CY15B104QSN-108SXIES by Infineon Technologies is a 512Kx8 memory IC with synchronous operation. It has a memory density of 4,194,304 bits and operates at a nominal voltage of 3V. This small outline package is ideal for industrial applications requiring reliable memory storage in compact spaces.
SMJ44C251-12MJD by Texas Instruments

SMJ44C251-12MJD

Texas Instruments

Other Memory ICs;
M36W108T120ZM6T by STMicroelectronics

M36W108T120ZM6T

STMicroelectronics

STMicroelectronics M36W108T120ZM6T is a 1MX8 memory IC with 8388608 bit memory density. It operates in industrial temperature range (-40 to 85 °C) and supports asynchronous mode. The package is rectangular, low profile grid array with 48 terminals, suitable for various applications requiring high-density memory solutions.
M36LLR8860D1ZAQ by STMicroelectronics

M36LLR8860D1ZAQ

STMicroelectronics

M36LLR8860D1ZAQ by STMicroelectronics is a low-profile, synchronous memory IC featuring 16M x 16 organization and a mixed FLASH+PSRAM type. It operates at a nominal voltage of 1.8V with a max temp of 85 °C, ideal for compact applications. Its grid array design ensures efficient space utilization in electronic devices.
MTFDDAK7T6QDE-2AV1ZABYY by Micron Technology

MTFDDAK7T6QDE-2AV1ZABYY

Micron Technology

MEMORY CIRCUIT;
MT29C4G48MAZBAAKQ-5IT by Micron Technology

MT29C4G48MAZBAAKQ-5IT

Micron Technology

Micron Technology's MT29C4G48MAZBAAKQ-5IT is a 256MX16 Synchronous Flash+SDRAM memory IC with 4294967296 bit density. Operating at 1.8V, it offers a max access time of 25ns and operates in industrial temperature range. Suitable for applications requiring high-speed data processing and storage in compact devices.
SN74HC670NP3 by Texas Instruments

SN74HC670NP3

Texas Instruments

SN74HC670NP3 by Texas Instruments is a CMOS memory IC with 16 terminals, operating temperature range of -40 to 85°C, and power supply of 2-6V. Its rectangular package shape makes it suitable for industrial applications requiring reliable memory functions in various electronic devices.
TMS27P64N25 by Texas Instruments

TMS27P64N25

Texas Instruments

Other Memory ICs;
ST25DV04K-JFR6U3 by STMicroelectronics

ST25DV04K-JFR6U3

STMicroelectronics

MEMORY CIRCUIT; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
ST25DV64K-IER6T3 by STMicroelectronics

ST25DV64K-IER6T3

STMicroelectronics

ST25DV64K-IER6T3 by STMicroelectronics is a 64KX1 memory circuit with 65536 bit memory density. Operating at 3.3V, it has a temperature range of -40 to 85 °C and is suitable for industrial applications requiring small outline, thin profile ICs.
47C04-E/SN by Microchip Technology

47C04-E/SN

Microchip Technology

47C04-E/SN by Microchip Technology is a small outline memory IC with 512x8 organization, EEPROM+SRAM mixed memory type, and synchronous operating mode. Ideal for automotive applications, it has a supply voltage range of 4.5V to 5.5V and operates in temperatures from -40°C to 125°C.
47L16-I/SN by Microchip Technology

47L16-I/SN

Microchip Technology

Microchip Technology's 47L16-I/SN is a small outline memory IC with 2Kx8 organization, EEPROM+SRAM mixed memory type, and synchronous operating mode. Ideal for industrial applications requiring a memory density of 16384 bits, it operates b/w -40 to 85°C temperatures with a supply voltage range of 2.7V to 3.6V.
M28F221-70YN3 by STMicroelectronics

M28F221-70YN3

STMicroelectronics

Other Memory ICs;
FM24C04A-S by Enhanced Memory Systems

FM24C04A-S

Enhanced Memory Systems

Other Memory ICs;
DM54S474W/883 by Texas Instruments

DM54S474W/883

Texas Instruments

Other Memory ICs; Terminal Finish: TIN LEAD; JESD-609 Code: e0;
SN74HC670N by Texas Instruments

SN74HC670N

Texas Instruments

SN74HC670N by Texas Instruments is a CMOS memory IC with 16 terminals and operating temperature range of -40 to 85°C. It has power supplies of 2/6V, suitable for industrial applications requiring reliable memory functions in an IN-LINE package style.
WSF512K16-39H2I by Microsemi

WSF512K16-39H2I

Microsemi

Microsemi's WSF512K16-39H2I is a 512Kx16 memory IC with CMOS technology. Operating at 5V, it has a temperature range of -40 to 85°C and a package style of grid array. With 524288 words and 8388608 bits, it is ideal for industrial applications requiring high memory density and asynchronous operation.