STMicroelectronics - M65KG256AF8W8

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M65KG256AF8W8 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number M65KG256AF8W8
Description DDR1 DRAM; Temperature Grade: OTHER; Refresh Cycles: 8192; Maximum Standby Current: .0006 Amp; Package Equivalence Code: WAFER; Organization: 16MX16;
Datasheet M65KG256AF8W8 Datasheet
In Stock547
NAME DESCRIPTION
Input/Output Type: COMMON
Memory Density: 268435456 bit
Maximum Standby Current: .0006 Amp
Organization: 16MX16
Output Characteristics: 3-STATE
Sequential Burst Length: 2,4,8,16
Sub-Category: DRAMs
Maximum Supply Current: 90 mA
Memory IC Type: DDR1 DRAM
Minimum Operating Temperature: -30 Cel
Memory Width: 16
Maximum Clock Frequency (fCLK): 133 MHz
No. of Words: 16777216 words
Qualification: Not Qualified
Package Equivalence Code: WAFER
Refresh Cycles: 8192
Interleaved Burst Length: 2,4,8,16
Technology: CMOS
Maximum Access Time: 6 ns
No. of Words Code: 16M
Nominal Supply Voltage / Vsup (V): 1.8
Maximum Operating Temperature: 85 Cel
Temperature Grade: OTHER
Power Supplies (V): 1.8
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