NAND512R4A2BZB6T by STMicroelectronics | Memory ICs

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	NAND512R4A2BZB6T
Description	FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 55; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Access Time: 35 ns;
Datasheet	NAND512R4A2BZB6T Datasheet
In Stock	3,407

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Organization:	32MX16
Maximum Seated Height:	1.2 mm
Programming Voltage (V):	1.8
Minimum Supply Voltage (Vsup):	1.7 V
Surface Mount:	YES
Terminal Finish:	TIN LEAD
No. of Terminals:	55
No. of Words:	33554432 words
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY, THIN PROFILE, FINE PITCH
Technology:	CMOS
JESD-30 Code:	R-PBGA-B55
Package Shape:	RECTANGULAR
Terminal Form:	BALL
Operating Mode:	ASYNCHRONOUS
Maximum Operating Temperature:	85 Cel
Package Code:	TFBGA
Width:	8 mm
Memory Density:	536870912 bit
Memory IC Type:	FLASH
JESD-609 Code:	e0
Minimum Operating Temperature:	-40 Cel
Memory Width:	16
No. of Functions:	1
Type:	SLC NAND TYPE
Qualification:	Not Qualified
Length:	10 mm
Maximum Access Time:	35 ns
No. of Words Code:	32M
Nominal Supply Voltage / Vsup (V):	1.8
Parallel or Serial:	PARALLEL
Terminal Pitch:	.8 mm
Temperature Grade:	INDUSTRIAL
Maximum Supply Voltage (Vsup):	1.95 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,407	-	-

FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G3;

RECTIFIER DIODE; Surface Mount: YES; Config: SINGLE; No. of Phases: 1; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V;

FDN306P by Onsemi is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 2.6A and 0.04 ohm RDS(on), suitable for small outline packages at temperatures ranging from -55 to 150°C.

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Operating Temperature: 125 Cel; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: 30 A;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 60 V; Maximum Operating Temperature: 150 Cel;