STMicroelectronics - SCT070W120G3-4AG

  1. Home
  2. STMicroelectronics - SCT070W120G3-4AG
SCT070W120G3-4AG by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number SCT070W120G3-4AG
Description Power Field-Effect Transistors;
Datasheet SCT070W120G3-4AG Datasheet
In Stock1,957
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,957 $9.190 $17,984.830

Popular Products

Category Top Products

IRF640STRRPBF by Vishay Siliconix

IRF640STRRPBF

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Minimum DS Breakdown Voltage: 200 V; JESD-30 Code: R-PSSO-G2;
FQD1N80TM by Fairchild Semiconductor

FQD1N80TM

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 1 A;
NTD3055-094T4G by Onsemi

NTD3055-094T4G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING;
IRFR9024PBF by Vishay Siliconix

IRFR9024PBF

Vishay Siliconix

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; JESD-30 Code: R-PSSO-G2; Minimum DS Breakdown Voltage: 60 V;
MSC035SMA170B4 by Microsemi

MSC035SMA170B4

Microsemi

Power Field-Effect Transistors;
IRF740SPBF by International Rectifier

IRF740SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Pulsed Drain Current (IDM): 40 A; Minimum DS Breakdown Voltage: 400 V;
IRFH5015TRPBF by International Rectifier

IRFH5015TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; No. of Elements: 1; JESD-609 Code: e3;
SUM110P06-08L-E3 by Vishay Intertechnology

SUM110P06-08L-E3

Vishay Intertechnology

Vishay Intertechnology's SUM110P06-08L-E3 is a P-channel FET with 60V DS breakdown voltage and 200A IDM. Ideal for switching applications, it features a single configuration with built-in diode, 0.008 ohm max RDS(on), and 272W max power dissipation.
IRFR024NTRPBF by Infineon Technologies

IRFR024NTRPBF

Infineon Technologies

IRFR024NTRPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM, 71mJ EAS, and 0.075ohm RDS(ON). With a max power dissipation of 45W and operating temperature of 175°C, it's suitable for high-power electronic systems.
IRFS3306TRLPBF by International Rectifier

IRFS3306TRLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 230 W; Maximum Drain Current (Abs) (ID): 160 A; Package Style (Meter): SMALL OUTLINE;
FDMC5614P by Onsemi

FDMC5614P

Onsemi

FDMC5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage and 23A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a SQUARE PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 6W at 150°C.
2N7002 by North American Philips Discrete Products Div

2N7002

North American Philips Discrete Products Div

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .115 A;
BSC060N10NS3GATMA1/SAMPLE by Infineon Technologies

BSC060N10NS3GATMA1/SAMPLE

Infineon Technologies

BSC060N10NS3GATMA1/SAMPLE by Infineon is a N-CHANNEL FET with PLASTIC/EPOXY package, ideal for SWITCHING applications. It features SINGLE configuration with built-in DIODE and METAL-OXIDE SEMICONDUCTOR technology. This 8-terminal transistor has RECTANGULAR shape, DUAL position terminals, and DRAIN case connection for surface mount use.
IRFP460LCPBF by International Rectifier

IRFP460LCPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;
FQB34N20LTM by Fairchild Semiconductor

FQB34N20LTM

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Case Connection: DRAIN; Package Style (Meter): SMALL OUTLINE;
NTMFS5C604NLT1G by Onsemi

NTMFS5C604NLT1G

Onsemi

NTMFS5C604NLT1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage, 900A IDM, and 0.0017 ohm RDS(on). It is used in power applications due to its 200W max power dissipation, -55 to 175 °C operating temp range, and built-in diode configuration.
IRF3205LPBF by International Rectifier

IRF3205LPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Peak Reflow Temperature (C): 260; No. of Elements: 1;
IRLML6401TRPBF by Infineon Technologies

IRLML6401TRPBF

Infineon Technologies

IRLML6401TRPBF by Infineon is a P-CHANNEL FET for SWITCHING applications. It features a 12V DS Breakdown Voltage, 34A IDM, and 0.05ohm RDS(on). With a small outline package style, it operates in an ambient temperature range of -55 to 150 °C.
IRFB4115PBF by International Rectifier

IRFB4115PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 380 W; Avalanche Energy Rating (EAS): 830 mJ; Maximum Drain Current (Abs) (ID): 104 A;
G3R450MT17D by Genesic Semiconductor

G3R450MT17D

Genesic Semiconductor

Power Field-Effect Transistors;