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| Manufacturer | STMicroelectronics |
|---|---|
| Manufacturer's Part Number | SCTWA60N12G2-4AG |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 388 W; Maximum Feedback Capacitance (Crss): 18 pF; Minimum DS Breakdown Voltage: 1200 V; |
| Datasheet | SCTWA60N12G2-4AG Datasheet |
| In Stock | 1,959 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON CARBIDE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 52 A |
| Maximum Pulsed Drain Current (IDM): | 156 A |
| Surface Mount: | NO |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 388 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 200 Cel |
| Case Connection: | DRAIN |
| Maximum Drain-Source On Resistance: | .058 ohm |
| Maximum Feedback Capacitance (Crss): | 18 pF |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 1200 V |
| Reference Standard: | AEC-Q101 |
