STMicroelectronics - SD1135-03

  1. Home
  2. STMicroelectronics - SD1135-03
SD1135-03 by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number SD1135-03
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 1.7 A; JESD-30 Code: O-PRDB-F4;
Datasheet SD1135-03 Datasheet
In Stock4,543
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 1.7 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 20
No. of Terminals: 4
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 15 W
Maximum Collector-Emitter Voltage: 16 V
Terminal Position: RADIAL
Package Style (Meter): DISK BUTTON
JESD-30 Code: O-PRDB-F4
No. of Elements: 1
Package Shape: ROUND
Terminal Form: FLAT
Highest Frequency Band: VERY HIGH FREQUENCY BAND
Maximum Operating Temperature: 200 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,543 - -

Popular Products

Category Top Products

BLV45/12 by NXP Semiconductors

BLV45/12

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 9 A; Transistor Application: AMPLIFIER; Maximum Operating Temperature: 200 Cel;
LLE18300XTRAY by NXP Semiconductors

LLE18300XTRAY

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Maximum Operating Temperature: 200 Cel; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
BFT98B by Infineon Technologies

BFT98B

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3300 MHz; Maximum Power Dissipation (Abs): 2.3 W; Maximum Collector Current (IC): .2 A;
SD1434 by STMicroelectronics

SD1434

STMicroelectronics

SD1434 by STMicroelectronics is a NPN RF Power BJT with 175W power dissipation, suitable for amplifier applications in the UHF band. It has a max collector-emitter voltage of 16V, can handle up to 10A collector current, and operates at temperatures up to 200 °C.
BLU45/12 by NXP Semiconductors

BLU45/12

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 9 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Maximum Operating Temperature: 200 Cel;
MRF9100LR3 by NXP Semiconductors

MRF9100LR3

NXP Semiconductors

RF Power Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
LLE16045X by NXP Semiconductors

LLE16045X

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 11 W; Maximum Collector Current (IC): .5 A; Minimum Power Gain (Gp): 8.5 dB;
AM0912-150 by STMicroelectronics

AM0912-150

STMicroelectronics

STMicroelectronics' AM0912-150 is a NPN RF BJT with 7.5 dB min power gain, ideal for L Band applications. It has a max power dissipation of 300W, operating temperature up to 250 °C, and can handle a collector current of 16.5A in a flange mount package.
BLU56 by NXP Semiconductors

BLU56

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; Minimum Power Gain (Gp): 12 dB; Terminal Position: DUAL;
1075MP by Microsemi

1075MP

Microsemi

1075MP by Microsemi is a NPN RF Power BJT with SINGLE configuration for AMPLIFIER applications. It operates in L BAND, has 4 terminals, and can handle up to 250W power dissipation. With a max operating temperature of 200°C, it features a collector-emitter voltage of 65V and collector current of 6.5A.
SD1729(TH416) by STMicroelectronics

SD1729(TH416)

STMicroelectronics

SD1729(TH416) by STMicroelectronics is an NPN RF power BJT designed for high-frequency applications. It features a max collector current of 12 A, operates up to 200 °C, and supports voltages up to 35 V. Ideal for surface mount designs in communication systems.
MAX2602ESA by Maxim Integrated

MAX2602ESA

Maxim Integrated

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Terminal Position: DUAL; Minimum DC Current Gain (hFE): 100;
BFG741TRL by NXP Semiconductors

BFG741TRL

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .3 A; No. of Elements: 1;
2SC2106 by Toshiba

2SC2106

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 2.8 A; JESD-30 Code: O-CRPM-F4; Package Shape: ROUND;
AM1011-400 by STMicroelectronics

AM1011-400

STMicroelectronics

STMicroelectronics' AM1011-400 is an NPN RF BJT transistor with 8 dB min power gain, ideal for L Band applications. It has a max power dissipation of 880 W and can handle up to 24 A collector current. The package is ceramic-metal sealed co-fired with a flange mount style, suitable for switching operations in high-power environments.
MX0912B251YTRAY by NXP Semiconductors

MX0912B251YTRAY

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Case Connection: BASE; No. of Elements: 1;
1214-55 by Microsemi

1214-55

Microsemi

Microsemi's 1214-55 is a NPN RF BJT transistor for switching applications. With a max IC of 8A, it operates in L Band frequencies up to 200°C. This single-configured transistor comes in a ceramic-metal package with flat terminals for surface mounting.
MRF224 by Motorola

MRF224

Motorola

MRF224 by Motorola is a NPN RF Power BJT with 4.5 dB min power gain, suitable for amplifier applications in the VHF band. It has a max power dissipation of 80 W, operates up to 175°C, and features a collector current of 7 A.
MRF492A by Motorola

MRF492A

Motorola

MRF492A by Motorola is a NPN RF BJT with 11 dB power gain, ideal for amplifier applications in the VHF band. With a max power dissipation of 250 W and max collector current of 20 A, it operates up to 150°C. Featuring a ceramic-metal package, it has a transition frequency of 50 MHz and collector-emitter voltage of 18 V.
SD1457 by STMicroelectronics

SD1457

STMicroelectronics

SD1457 by STMicroelectronics is a NPN RF Power BJT with 4 terminals and 100W power dissipation. It operates in the VHF band, has a max. collector-emitter voltage of 30V, and a transition frequency of 108MHz. Ideal for amplifier applications due to its high power handling capabilities and very high operating temperature of 175 °C.