STMicroelectronics - SGSP563

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SGSP563 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number SGSP563
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Terminal Position: BOTTOM; Maximum Operating Temperature: 150 Cel;
Datasheet SGSP563 Datasheet
In Stock4,886
NAME DESCRIPTION
Package Body Material: METAL
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 10 A
Maximum Pulsed Drain Current (IDM): 40 A
Surface Mount: NO
No. of Terminals: 2
Maximum Power Dissipation (Abs): 125 W
Terminal Position: BOTTOM
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: O-MBFM-P2
No. of Elements: 1
Package Shape: ROUND
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .45 ohm
Maximum Feedback Capacitance (Crss): 100 pF
JEDEC-95 Code: TO-3
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 250 V
Maximum Drain Current (Abs) (ID): 10 A
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