STMicroelectronics - STB100N10F7

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STB100N10F7 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STB100N10F7
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Peak Reflow Temperature (C): NOT SPECIFIED; JESD-30 Code: R-PSFM-T3; Transistor Element Material: SILICON;
Datasheet STB100N10F7 Datasheet
In Stock2,501
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 400 mJ
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 80 A
JEDEC-95 Code: TO-220AB
Maximum Pulsed Drain Current (IDM): 320 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 100 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .008 ohm
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