STB11NM60Z-1 by STMicroelectronics | Transistors

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Manufacturer	STMicroelectronics
Manufacturer's Part Number	STB11NM60Z-1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Drain Current (ID): 11 A; JESD-30 Code: R-PSIP-T3;
Datasheet	STB11NM60Z-1 Datasheet
In Stock	2,465

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	11 A
Maximum Pulsed Drain Current (IDM):	44 A
Surface Mount:	NO
No. of Terminals:	3
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.45 ohm
Avalanche Energy Rating (EAS):	350 mJ
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	600 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED
Peak Reflow Temperature (C):	250

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,465	-	-

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