STMicroelectronics - STB12NM50FD-1

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STB12NM50FD-1 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STB12NM50FD-1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; Maximum Operating Temperature: 150 Cel; Terminal Position: SINGLE;
Datasheet STB12NM50FD-1 Datasheet
In Stock2,179
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 12 A
Maximum Pulsed Drain Current (IDM): 48 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: TIN
No. of Terminals: 3
Maximum Power Dissipation (Abs): 160 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .4 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 400 mJ
JEDEC-95 Code: TO-262AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 500 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 12 A
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