STMicroelectronics - STB57N65M5

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STB57N65M5 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STB57N65M5
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 650 V; Maximum Drain-Source On Resistance: .063 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet STB57N65M5 Datasheet
In Stock12,180
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 42 A
Maximum Pulsed Drain Current (IDM): 168 A
Surface Mount: NO
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .063 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 960 mJ
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 650 V
Peak Reflow Temperature (C): 245
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