STMicroelectronics - STD16NF06LT4

STD16NF06LT4 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STD16NF06LT4
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; JESD-30 Code: R-PSSO-G2; Avalanche Energy Rating (EAS): 200 mJ;
Datasheet STD16NF06LT4 Datasheet
In Stock8,125
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 24 A
Maximum Pulsed Drain Current (IDM): 96 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 2
Maximum Power Dissipation (Abs): 40 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .085 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 200 mJ
JEDEC-95 Code: TO-252AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Additional Features: LOW THRESHOLD, LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID): 24 A
Peak Reflow Temperature (C): 260
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