STMicroelectronics - STD50NH02L-1

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STD50NH02L-1 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STD50NH02L-1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Package Style (Meter): IN-LINE; Case Connection: DRAIN;
Datasheet STD50NH02L-1 Datasheet
In Stock4,983
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 50 A
Maximum Pulsed Drain Current (IDM): 200 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 60 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0105 ohm
Avalanche Energy Rating (EAS): 280 mJ
JEDEC-95 Code: TO-251
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 24 V
Qualification: Not Qualified
Additional Features: LOW THRESHOLD
Maximum Drain Current (Abs) (ID): 50 A
Peak Reflow Temperature (C): 260
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