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| Manufacturer | STMicroelectronics |
|---|---|
| Manufacturer's Part Number | STD845DN40 |
| Description | NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 4 A; Transistor Element Material: SILICON; |
| Datasheet | STD845DN40 Datasheet |
| In Stock | 399 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 4 A |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | NPN |
| Surface Mount: | NO |
| Minimum DC Current Gain (hFE): | 12 |
| Terminal Finish: | MATTE TIN |
| JESD-609 Code: | e3 |
| No. of Terminals: | 8 |
| Qualification: | Not Qualified |
| Maximum Power Dissipation (Abs): | 3 W |
| Maximum Collector-Emitter Voltage: | 400 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-PDIP-T8 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 150 Cel |
