STMicroelectronics - STD96N3LLH6

STD96N3LLH6 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STD96N3LLH6
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Transistor Element Material: SILICON; No. of Elements: 1;
Datasheet STD96N3LLH6 Datasheet
In Stock54
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 80 A
Maximum Pulsed Drain Current (IDM): 320 A
Sub-Category: FET General Purpose Powers
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 70 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .007 ohm
Avalanche Energy Rating (EAS): 150 mJ
JEDEC-95 Code: TO-252
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 30 V
Maximum Drain Current (Abs) (ID): 80 A
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
54 $0.393 $21.222

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