STMicroelectronics - STE16N100

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STE16N100 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STE16N100
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 400 W; Qualification: Not Qualified; JESD-30 Code: R-PUFM-X4;
Datasheet STE16N100 Datasheet
In Stock4,771
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 16 A
Maximum Pulsed Drain Current (IDM): 64 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 4
Maximum Power Dissipation (Abs): 400 W
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .7 ohm
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 1000 V
Qualification: Not Qualified
Reference Standard: UL RECOGNIZED
Maximum Drain Current (Abs) (ID): 16 A
Peak Reflow Temperature (C): NOT SPECIFIED
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