STMicroelectronics - STE53NM50

  1. Home
  2. STMicroelectronics - STE53NM50
STE53NM50 by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number STE53NM50
Description N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 450 W; Maximum Drain Current (ID): 50 A; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 50 A;
Datasheet STE53NM50 Datasheet
In Stock800
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 450 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 50 A
Maximum Drain Current (Abs) (ID): 50 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
800 - -

Popular Products

Category Top Products

IRFP460 by Intersil

IRFP460

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Transistor Element Material: SILICON; Avalanche Energy Rating (EAS): 960 mJ;
ZXMP6A17E6TA by Zetex Plc

ZXMP6A17E6TA

Zetex Plc

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: Matte Tin (Sn); Maximum Time At Peak Reflow Temperature (s): 40; Qualification: Not Qualified;
IRLL024NTRPBF by Infineon Technologies

IRLL024NTRPBF

Infineon Technologies

IRLL024NTRPBF by Infineon Technologies is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 3.1A Max Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 12A Pulsed Drain Current, and 0.065 ohm On Resistance. Suitable for surface mount with GULL WING terminals in a SMALL OUTLINE package style.
FDB2710 by Onsemi

FDB2710

Onsemi

FDB2710 by Onsemi is a N-CHANNEL Power FET with 250V DS Breakdown Voltage, 50A Drain Current, and 0.0425 ohm On Resistance. Ideal for power management applications due to its 260W Power Dissipation, ENHANCEMENT MODE operation, and built-in DIODE configuration.
NTD3055-094T4G by Onsemi

NTD3055-094T4G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING;
SI4946BEY-T1-GE3 by Vishay Intertechnology

SI4946BEY-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI4946BEY-T1-GE3 is an N-channel power FET with a min DS breakdown voltage of 60V. It has a max pulsed drain current of 30A and an avalanche energy rating of 7.2mJ. This transistor is suitable for applications requiring high power dissipation and fast switching times.
IRF530NSTRLPBF by Infineon Technologies

IRF530NSTRLPBF

Infineon Technologies

Infineon's IRF530NSTRLPBF is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 17A Max ID. Ideal for SWITCHING applications, it features a built-in DIODE, 0.09 ohm RDS(on), and 60A IDM. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package style.
SQJ409EP-T1_GE3 by Vishay Intertechnology

SQJ409EP-T1_GE3

Vishay Intertechnology

Vishay Intertechnology's SQJ409EP-T1_GE3 is a P-CHANNEL FET with 40V DS Breakdown Voltage, 150A IDM, and 0.007 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IRFS4010TRLPBF by Infineon Technologies

IRFS4010TRLPBF

Infineon Technologies

IRFS4010TRLPBF by Infineon is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 180A Drain Current. It is used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max power dissipation of 375W.
FQD12N20LTM by Fairchild Semiconductor

FQD12N20LTM

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Minimum DS Breakdown Voltage: 200 V; Terminal Form: GULL WING;
IRF740SPBF by International Rectifier

IRF740SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Pulsed Drain Current (IDM): 40 A; Minimum DS Breakdown Voltage: 400 V;
SIS862DN-T1-GE3 by Vishay Intertechnology

SIS862DN-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SIS862DN-T1-GE3 is a N-channel Power FET with 60V DS breakdown voltage, 40A max drain current, and 0.0085 ohm max on resistance. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package suitable for surface mount technology.
FDT434P by Onsemi

FDT434P

Onsemi

FDT434P by Onsemi is a P-CHANNEL Power FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 6A Drain Current, 0.05 ohm On Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 3W and operating temperature up to 150°C, it's suitable for various electronic designs.
IRF7507TRPBF by Infineon Technologies

IRF7507TRPBF

Infineon Technologies

IRF7507TRPBF by Infineon Technologies is a Power FET with N-CHANNEL and P-CHANNEL configuration. It has a max drain current of 2.4A, on-resistance of 0.14 ohm, and operates in enhancement mode for switching applications. This transistor is designed for surface mount with a package style of small outline, making it suitable for various electronic devices requiring efficient power management.
STW9N150 by STMicroelectronics

STW9N150

STMicroelectronics

STW9N150 by STMicroelectronics is a Power FET with 1500V DS Breakdown Voltage, 32A IDM, and 320W Pd. Ideal for SWITCHING applications, it features N-CHANNEL polarity, SINGLE configuration with built-in diode, and operates in ENHANCEMENT MODE.
SQM120P10-10M1L_GE3 by Vishay Intertechnology

SQM120P10-10M1L_GE3

Vishay Intertechnology

Vishay Intertechnology's SQM120P10-10M1L_GE3 is a P-channel FET with 100V DS breakdown voltage, 480A IDM, and 0.0101 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
AO3400A by Alpha & Omega Semiconductor

AO3400A

Alpha & Omega Semiconductor

AO3400A by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage and 5.7A ID. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. With a max power dissipation of 1.4W, it can handle up to 30A IDM in a SMALL OUTLINE package style.
BSC030P03NS3GAUMA1 by Infineon Technologies

BSC030P03NS3GAUMA1

Infineon Technologies

BSC030P03NS3GAUMA1 by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, 200A IDM, and 0.0046 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 125W. The transistor has a small outline package style and can withstand temperatures from -55 to 150 °C.
IRFR9024NTRPBF by Infineon Technologies

IRFR9024NTRPBF

Infineon Technologies

IRFR9024NTRPBF by Infineon Technologies is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 44A and EAS of 62mJ, operating in ENHANCEMENT MODE. With a compact RECTANGULAR package and GULL WING terminals, it offers high performance in a small outline design.
ZXMP10A18GTA by Zetex Plc

ZXMP10A18GTA

Zetex Plc

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.9 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE;