STMicroelectronics - STF11N52K3

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STF11N52K3 by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STF11N52K3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR; Additional Features: ULTRA-LOW RESISTANCE;
Datasheet STF11N52K3 Datasheet
In Stock3,929
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 170 mJ
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 10 A
JEDEC-95 Code: TO-220AB
Maximum Pulsed Drain Current (IDM): 40 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 525 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Additional Features: ULTRA-LOW RESISTANCE
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .51 ohm
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